? 2006 ixys all rights reserved symbol test conditions maximum ratings v dsx t j = 25 c to 150 c 500 v v dgx t j = 25 c to 150 c 500 v v gs continuous 30 v v gsm transient 40 v i d25 t c = 25 c 20 a i dm t c = 25 c; pulse width limited by t jm 50 a p d t c = 25 c 400 w t j -55 ... + 150 c t jm 150 c t stg -55 ... + 150 c t l 1.6 mm (0.063 in) from case for 10 seconds 300 c t isol plastic case for 10 seconds 300 c m d mounting torque 1.13/10 nm/lb.in. weight to-247 6 g to-268 4 g features z normally on mode z international standard packages z molding epoxies meet ul 94 v-0 flammability classification applications z level shifting z triggers z solid state relays z current regulators z active load symbol test conditions characteristic values (t j = 25c, unless otherwise specified) min. typ. max. v dsx v gs = -10 v, i d = 250 ma 500 v v gs(off) v ds = 25 v, i d = 250 ma -1.5 -3.5 v i gss v gs = 30 v dc , v ds = 0 100 na i dsx(off) v ds = v dss t j = 25c 25 a v gs = -10 v t j = 125c 500 a r ds(on) v gs = 10 v, i d = 10 a note 1 0.33 i d(on) v gs = 0 v, v ds = 25 v note 1 1.5 a 99192(01/06) preliminary data sheet to-247 (ixfh) g = gate d = drain s = source tab = drain ixth 20n50d ixtt 20n50d high voltage mosfet n-channel , depletion mode v dss = 500 v i d25 =20a r ds(on) = 0.33 g d s (tab) to-268 (ixtt) g s d (tab)
ixys reserves the right to change limits, test conditions, and dimensions. ixth 20n50d ixtt 20n50d symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 30 v, i d =10 a, note 1 4.0 7.5 s c iss 2500 pf c oss v gs = -10 v, v ds = 25 v, f = 1 mhz 400 pf c rss 100 pf t d(on) 35 ns t r v gs = 0 v to -10 v, v ds = 0.5 ? v dsx 85 ns t d(off) i d = 10 a, r g = 4.7 (external), 110 n s t f 75 ns q g(on) 125 nc q gs v gs = 10 v, v ds = 0.5 ? v dsx , i d = 0.5 ? i d25 35 nc q gd 51 nc r thjc 0.31 k/w r thck 0.25 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. v sd i f = i d25 , v gs = -10 v, note 1 0.85 1.5 v t rr i f = 20a, -di/dt = 100 a/ s, v r = 100 v 510 ns v gs = -10 v terminals: 1 - gate 2 - drain 3 - source tab - drain 1 2 3 to-247 ad (ixth) outline note 1: pulse test, t 300 s, duty cycle d 2 % dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 terminals: 1 - gate 2 - drain 3 - source tab - drain to-268 (ixtth) outline
? 2006 ixys all rights reserved fig. 1. output characte ristics @ 25 o c 0 2 4 6 8 10 12 14 16 18 20 012345678910 v d s - volts i d - amperes v gs = 5v 2v 1v 0v 3v 4v 0v -1v fig. 2. extended output characteristics @ 25 o c 0 5 10 15 20 25 30 35 40 0 3 6 9 12 15 18 21 24 27 30 v d s - volts i d - amperes v gs = 5v 3v 2v 4v 1v 0v fig. 3. output characteristics @ 125 o c 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 101214161820 v d s - volts i d - amperes v gs = 5v 2v 3v 4v 1v 0v -1v fig. 4. r ds(on ) norm alize d to 0.5 i d25 value vs. junction temperature 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s ( o n ) - normalized v gs = 5v v gs = 10v i d = 10a fig . 5. r ds(on) norm alized to 0.5 i d25 value vs. i d 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 0 5 10 15 20 25 30 i d - amperes r d s ( o n ) - normalized t j = 125oc t j = 25oc v gs = 10v v gs = 5v fig. 6. drain current vs. case temperature 0 2 4 6 8 10 12 14 16 18 20 22 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes ixth 20n50d ixtt 20n50d
ixys reserves the right to change limits, test conditions, and dimensions. ixth 20n50d ixtt 20n50d fig. 7. input adm ittance 0 5 10 15 20 25 -2-10 123 v g s - volts i d - amperes t j = 125oc 25oc -40oc v ds = 30v fig. 8. transconductance 0 2 4 6 8 10 12 14 0 5 10 15 20 25 30 i d - amperes g f s - siemens t j = -40oc 25oc 125oc v ds = 30v fig. 9. source current vs. source-to-drain voltage 0 5 10 15 20 25 30 35 40 45 50 55 60 0.5 0.6 0.7 0.8 0.9 1 v s d - volts i s - amperes t j = 125oc t j = 25oc v gs = -10v fig. 10. dependence of breakdow n and threshole voltages on tem perature 0.8 0.9 1 1.1 1.2 1.3 1.4 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade bv / v g s ( o f f ) - normalized v gs(off) @ v ds = 25v bv dss @ v gs = -10v fig. 11. gate charge -5 -3 -1 1 3 5 7 9 11 0 20 40 60 80 100 120 140 q g - nanocoulombs v g s - volts v ds = 250v i d = 10a i g = 10ma fig. 12. capacitance 10 100 1000 10000 0 5 10 15 20 25 30 35 40 v d s - volts capacitance - picofarads c iss c oss c rss f = 1mhz v gs = -10v
? 2006 ixys all rights reserved fig. 13. forw ard-bias safe operating area 1 10 100 10 100 1000 v d s - volts i d - amperes 100 s 1ms dc t j = 150oc t c = 25oc r d s(on) limit 10m s 25 s fig. 14. maximum transient thermal resistance 0.01 0.10 1.00 0.1 1 10 100 1000 pulse width - millisec onds r ( t h ) j c - oc / w ixth 20n50d ixtt 20n50d
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